Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMFS4C06N: Power MOSFET 30V 69A 4 mOhm Single N-Channel S0-8FL

Product Description
NTMFS4C06N
Features
 
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • These Devices are PbFree and are RoHS Compliant
Applications
  • CPU Power Delivery
  • DCDC Converters
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 69A 4 mOhm Single N-Channel S0-8FL   N-Channel   Single   30   20   2.1   69   30.5     6   4     26   4   22   1683   841   40   SO-8FL / DFN-5 
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5 x