Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMFS4852N: Power MOSFET 30V 155A 2.1 mOhm Single N-Channel SO-8FL

Product Description
This is a 30 V N-Channel Power MOSFET.
Features   Benefits
     
  • Low RDS(on)
 
  • Minimizes conduction losses
  • Low capacitance
 
  • Minimizes driver losses
  • Optimized gate charge
 
  • Minimizes switching losses
Applications
  • CPU power delivery
  • DC-DC converters
  • Low-side switching
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 155A 2.1 mOhm Single N-Channel SO-8FL   N-Channel   Single   30   20   2.5   155   86.2     3.3   2.1   34.3   71.3   11.3   28.6   4970   970   427   SO-8FL / DFN-5 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 155A 2.1 mOhm Single N-Channel SO-8FL   N-Channel   Single   30   20   2.5   155   86.2     3.3   2.1   34.3   71.3   11.3   28.6   4970   970   427   SO-8FL / DFN-5 
Package Availability
Type
PB free
Standard
SO-8FL / DFN-5 x