Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTMD4820N: Power MOSFET 30V 8.0A 20 mOhm Dual N-Channel SO-8

Product Description
Power MOSFET 30 V, 8 A, Dual N-Channel, SOIC-8
Features
 
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • Dual SOIC-8 Surface Mount Package Saves Board Space
Applications
  • Disk Drives
  • DC-DC Converters
  • Printers
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 8.0A 20 mOhm Dual N-Channel SO-8   N-Channel   Dual   30   20   3   8   1.28     27   20   7.7     3.2   8   940   225   125   SOIC-8 
Package Availability
Type
PB free
Standard
SOIC-8 x