Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTLJF4156N: Power MOSFET 30V 4.6A 70 mOhm Single N-Channel WDFN-6 FETky

Product Description
Power MOSFET and Schottky Diode 30 V, 4.0 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
Features
 
  • WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
  • Co-Packaged MOSFET and Schottky For Easy Circuit Layout
  • RDS(on) Rated at Low VGS=1.5 V
  • Low Profile (< 0.8mm) for Easy Fit in Thin Environments
  • Low VF Schottky
  • This is a Pb-Free Device
Applications
  • DC-DC Converters
  • Li-Ion Battery Applications in Cell Phones, PDAs, Media Players
  • Color Display and Camera Flash Regulators
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 4.6A 70 mOhm Single N-Channel WDFN-6 FETky   N-Channel   with Schottky Diode   30   8   1   4   2.3   90   70     5.4     1.24   5   427   51   32   WDFN-6 
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 4.6A 70 mOhm Single N-Channel WDFN-6 FETky   N-Channel   with Schottky Diode   30   8   1   4   2.3   90   70     5.4     1.24   5   427   51   32   WDFN-6 
Package Availability
Type
PB free
Standard
WDFN-6 x