Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTJD4105C: Small Signal MOSFET 20V 775mA 220 mOhm Complementary SC−88

Product Description
This complementary dual device was designed with a small package (2 x 2 mm) and low RDS(on) MOSFETs for minimum footprint and increased circuit efficiency. The low RDS(on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras, and PDAs.
Features
 
  • Complementary N and P Channel Device
  • Leading -8.0 V Trench for Low RDS(on) Performance
  • ESD Protected Gate-ESD Rating: Class 1
  • SC-88 Package for Small Footprint (2x2mm)
  • Pb-Free Packages are Available
Applications
  • DC-DC Conversion
  • Load/Power Switching
  • Single or Dual Cell Li-Ion Battery Supplied Devices
  • Cell Phones, MP3s, Digital Cameras, and PDAs
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Small Signal MOSFET 20V 775mA 220 mOhm Complementary SC−88   Complementary   Dual   20   12   1.5   0.63   0.27   445   375     1.3     0.4     33   13   2.8   SC-88-6 / SC-70-6 / SOT-363-6 
 Pb-free 
 Halide free 
 Active     Small Signal MOSFET 20V 775mA 220 mOhm Complementary SC−88   Complementary   Dual   20   12   1.5   0.63   0.27   445   375     1.3     0.4     33   13   2.8   SC-88-6 / SC-70-6 / SOT-363-6 
Package Availability
Type
PB free
Standard
SC-88-6 / SC-70-6 / SOT-363-6 x