Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTHD4502N: Power MOSFET 30V 3.9A 85 mOhm Dual N-Channel ChipFET

Product Description
This device is optimized for fast low side switching applications. It features a technology that provides a balance between low gate charge and low RDS(on)
Features
 
  • Planar Technology Device Offers Low RDS(on) and Fast Switching Speed
  • Leadless ChipFET™ Package has 40% Smaller Footprint than TSOP-6. Ideal Device Applications Where Board Space is at a Premium.
  • ChipFET™ Package Exhibits Excellent Thermal Capabilities. Ideal for Applications Where Heat Transfer is Required.
  • Pb-Free Package Option for Green Manufacturing.
  • Pb-Free Package is Available
Applications
  • DC-DC Buck or Boost Converters
  • Low Side Switching
  • Optimized for Battery and Low Side Switching Applications in Computing and Portable Equipment
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 30V 3.9A 85 mOhm Dual N-Channel ChipFET   N-Channel   Dual   30   20   3   3.9   2.1     140   85   1.9   3.6   0.7   4   140   53   16   ChipFET-8 
Package Availability
Type
PB free
Standard
ChipFET-8 x