Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTHD3100C: Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET

Product Description
Power MOSFET Complementary, 20 V, +3.9 A/-4.4 A ChipFET™
Features
 
  • Complementary N-Channel and P-Channel MOSFET
  • Small Size, 40% Smaller then TSOP-6 Package
  • Leadless SMD Package Provides Great Thermal Charcteristics
  • Trench P-Channel for Low On Resistance
  • Low Gate Charge N-Channel for Test Switching
  • Pb-Free Packages are Available
Applications
  • DC-toDC Conversion Circuits
  • Load Switch Applications Requiring Level Shift
  • Drive Small Brushless DC Motors
  • Ideal for Power Mangement Applications in Portable, Battery Powered Products
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET   Complementary   Dual   20   12   1.2   3.9   3.1   115   80     2.3     0.7   6   165   80   25   ChipFET-8 
Package Availability
Type
PB free
Standard
ChipFET-8 x x