Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NTHC5513: Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET

Product Description
This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.
Features
 
  • Small Size, 40% Smaller than TSOP-6 Package
  • Leadless SMD Package Featuring Complementary Pair
  • ChipFET™ Package Provides Great Thermal Characteristics Similar to Larger Packages
  • Low RDS(on) in a ChipFET™ Package for High Efficiency Performance
  • Low Profile (< 1.1 mm) Allows Placement in Extremely Thin Environments such as Portable Electronics
  • Complentary N Channel and P Channel MOSFET
Applications
  • Load Switch Applications Requiring Level Shift
  • DC-DC Conversion Circuits
  • Drives Small Brushless DC Motors
  • Designed for Power Management Applications in Portable and Battery Power Products
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET   Complementary   Dual   20   12   1.2   3.9   2.1   115   80     4     0.7   6   180   80   25   ChipFET-8 
Package Availability
Type
PB free
Standard
ChipFET-8 x