Power Solutions from ON Semiconductor
Contact Us | Company | Investors | Careers
 
         
 

NTD60N02R: Power MOSFET 25 V, 62 A, N-Channel, DPAK

Overview
Specifications
Packages
Datasheet: Power MOSFET 62 A, 25 V, N-Channel DPAK
Rev. 12 (79.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (12)
Product Description
Power MOSFET 62 Amps, 25 Volts, N-channel, DPAK
Features
 
  • Low RDS(on) to Minimize Conduction Loss
  • Low Ciss to Minimize Driver Loss
  • Low Gate Charge
  • Optimized for High Side Switching Requirements in High Efficiency DC-DC Converters
  • Pb-Free Packages are Available
Technical Information
Simulation Models (4) Package Drawings (2)
Data Sheets (1)  
Availability and Samples
Product
Status
Pb-free
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Pins
Case Outline
Type
Qty.
NTD60N02R-1G
Active Power MOSFET 25V 62A 10.5 mOhm Single N-Channel IPAK DPAK−3 (SINGLE GAUGE) 4 369D Rail 75 $0.18
Sample
Inventory
NTD60N02RG
Last Shipments Power MOSFET 62 A, 25 V, N-Channel DPAK 4 LEAD Single Gauge Surface Mount 4 369AA 1 Rail 75  
Rochester
Contact Sales Office
NTD60N02RT4G
Active Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK DPAK 4 LEAD Single Gauge Surface Mount 4 369AA 1 Tape and Reel 2500 $0.18
Sample
Inventory
NTD60N02RT4
Last Shipments Power MOSFET 62 A, 25 V, N-Channel DPAK 4 LEAD Single Gauge Surface Mount 4 369AA 1 Tape and Reel 2500  
Rochester
Contact Sales Office
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
V(BR)DSS Min (V) : 25
ID Max (A) : 62
PD Max (W) : 58
Channel Polarity : N Channel
Package : DPAK−3 (SINGLE GAUGE)
rDS(on) Max (mΩ) : 10.5
VGS Max (V) : 20
Configuration : Single
Qg Typ (nC) : 9.5
Market Leadtime (weeks) : 12+
P&S  (2009-11-19) : >1K
V(BR)DSS Min (V) : 25
ID Max (A) : 62
PD Max (W) : 58
Channel Polarity : N Channel
Package : DPAK 4 LEAD Single Gauge Surface Mount
rDS(on) Max (mΩ) : 10.5
VGS Max (V) : 20
Configuration : Single
Qg Typ (nC) : 9.5
Market Leadtime (weeks) : 12+
Arrow  (2009-11-19) : In Stock
ON Semiconductor  (2009-11-18) : 5400
V(BR)DSS Min (V) : 25
ID Max (A) : 62
PD Max (W) : 58
Channel Polarity : N Channel
Package : DPAK 4 LEAD Single Gauge Surface Mount
rDS(on) Max (mΩ) : 10.5
VGS Max (V) : 20
Configuration : Single
Qg Typ (nC) : 9.5
Market Leadtime (weeks) : 12+
Digi-Key  (2009-11-19) : <1K
P&S  (2009-11-19) : >1K
V(BR)DSS Min (V) : 25
ID Max (A) : 62
PD Max (W) : 58
Channel Polarity : N Channel
Package : DPAK 4 LEAD Single Gauge Surface Mount
rDS(on) Max (mΩ) : 10.5
VGS Max (V) : 20
Configuration : Single
Qg Typ (nC) : 9.5
Market Leadtime (weeks) : 12+
Selected Electrical Specifications

For full electrical specifications, see the datasheet.

Symbol Boundary Value Unit Condition
V(BR)DSS min 25
V VGS = 0V, ID = 0.25mA
VGS max 20
V
rDS(on) max 10.5
VGS = 10V, ID = 20A
Qg typ 9.5
nC VGS=4.5 VDC, VDS=10 VDC, ID=31 ADC
ID max 62
A TC = 25°C
PD max 58
W TC = 25°C
Polarity N Channel

Configuration Single

For complete packaging information, see the datasheet
»View Material Composition
Case Outlines
369AA    369D   
Packages
For complete product information, see the datasheet
Previously Viewed Products
Clear List

New Semiconductor & Integrated Circuit Devices
 

NTMS4920N  NTMS4935N  NTMS4937N  NTMS4939N  30 V Single N-Channel MOSFETs in SOIC-8

  • RDS(ON) as low as 4.3 mΩ @ 10 VGS to Minimize Conduction Losses
  • Low CRSS and CISS to Minimize Driver Losses
  • Optimized Gate Charge to minimize Switching Losses

NTTFS4932N  NTTFS4937N  NTTFS4939N  NTTFS4941N  NTTFS4943N  NTTFS4945N  30 V Single N-Channel MOSFETs in DFN-8 FL

  • RDS(ON) as low as 4.0 mΩ @ 10 VGS to minimize conduction losses
  • Low CRSS and CISS to minimize driver losses
  • Optimized gate charge to minimize switching losses