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NTD2955: Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK

Overview
Specifications
Packages
Datasheet: Power MOSFET, -60 V, -12 A, P-Channel DPAK
Rev. 15 (82kB)
Product Overview
»View Reliability Data
»View Material Composition
»Product Change Notification (9)
This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Features
 
  • Avalanche Energy Specified
  • IDSS and VDS(on) Specified at Elevated Temperature
  • Designed for Low Voltage, High Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
  • Pb-Free Packages are Available
Applications
  • Low Voltage and High Speed Switching Applications in power supplies, converters, and power motor controls.
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (2)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NTD2955-1G Active
Pb-free
Halide free
Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK IPAK-4 369D 1 Tube 75 $0.2533
NTD2955G Last Shipments
Pb-free
Halide free
Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK DPAK-3 369C 1 Tube 75  
NTD2955T4G Active
Pb-free
Halide free
Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK DPAK-3 369C 1 Tape and Reel 2500 $0.2533
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : Contact Factory
Avnet   (2016-12-04) : <1K
Market Leadtime (weeks) : Contact Factory
Avnet   (2016-12-04) : >10K
ON Semiconductor   (2016-12-03) : 12,450
Market Leadtime (weeks) : Contact Factory
Arrow   (Mon Dec 05 09:33:47 MST 2016) : 682500
Chip1Stop   (2016-12-04) : <1K
Digikey   (2016-12-04) : <1K
PandS   (2016-12-04) : >10K
Datasheet: Power MOSFET, -60 V, -12 A, P-Channel DPAK
Rev. 15 (82kB)
Product Overview
»View Reliability Data
»View Material Composition
»Product Change Notification (9)

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
Pb-free
Halide free
 Active     Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK 
P-Channel
Single
60
20
4
12
55
   
180
 
15
7
100
500
150
50
IPAK-4
Pb-free
Halide free
 Active     Power MOSFET -60V -12A 180 mOhm Single P-Channel DPAK 
P-Channel
Single
60
20
4
12
55
   
180
 
15
7
100
500
150
50
DPAK-3
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