Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NSS30201MR6T1G: Low VCE(sat) Transistor, NPN, 30 V, 2.0 A

Product Description
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Features
 
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
Applications
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
Selected Electrical Specifications

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min hFE Max fT Min (MHz) PTM Max (W) Package Type
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, NPN, 30 V, 2.0 A   NPN   2   30   0.2   300   900   200   1.75   TSOP-6 
 AEC Qualified 
 PPAP Capable 
 Pb-free 
 Halide free 
 Active     Low VCE(sat) Transistor, NPN, 30 V, 2.0 A   NPN   2   30   0.2   300   900   200   1.75   TSOP-6 
Package Availability
Type
PB free
Standard
TSOP-6 x