NSS1C200: Low VCE(sat) Transistor, PNP, 100 V, 2.0 A
Product Description
Low V CE(sat) Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage V CEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
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Features |
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Benefits |
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High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
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Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
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NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
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Applications |
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End Products |
- Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
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- Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.
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