Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NSR02F30NXT5G: Schottky Barrier Diode, 200 mA, 30 V

Product Description
The Schottky diode is optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon no lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
Features   Benefits
     
  • Low Forward Voltage Drop
 
  • Reduces Power Dissipation
  • High Switching Speed
 
  • Better Performance
  • High ESD Rating
 
  • HBM: 3B MM: C
  • Low Reverse Current
   
Applications   End Products
  • LCD and Keypad Backlighting
  • Camera Photo Flash
  • Buck and Boost DC-DC Converters
 
  • Reverse Voltage and Current Protection
  • Mobile Handsets
  • Notebooks, PCs & PDA
  • GPS, MP3 Players
Selected Electrical Specifications

Product Compliance Status Description Configuration VRRM Min (V) VF Max (V) IRM Max (uA) IO(rec) Max (A) IFSM Max (A) trr Max (ns) Cj Max (pF) Package Type
 Pb-free 
 Halide free 
 Active     Schottky Barrier Diode, 200 mA, 30 V, DSN2 (0201) Schottky Barrier Diode   Single   30   0.37   7   0.2   4   -   7   DSN-2 
Package Availability
Type
PB free
Standard
DSN-2 x