General Purpose and Low VCE(sat) Transistors | NJVMJD148T4G

NPN Bipolar Power Transistor

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Overview

The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
  • High Gain - 50 Min @ IC = 2.0 Amps
  • Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps
  • High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC = 250 mAdc
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • This is a PbFree Device

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