NID5001N: Self-Protected MOSFET, 42 V clamp, Temp & Current Limit, ESD

Datasheet: Self-Protected FET with Temperature and Current Limit
Rev. 8 (66.0kB)
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Product Overview
Product Description
NID5001N is part of an advanced series of power MOSFETs which utilize ON Semiconductor's latest MSOFET technology process to achieve the lowest possible on-resistance per silicon are while incorporating smart features.

Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source clamp.
  • Low RDSon
  • Current Limitation
  • Thermal Shutdown with Automatic Restart
  • Short Circuit Protection
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified
  • Slew Rate Control for Low Noise Switching
  • Overvoltage Clamped Protection
  • Pb-Free Package is Available
Technical Documentation & Design Resources
Application Notes (1) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Budgetary Price/Unit
Case Outline
NID5001NT4G Consult Sales Office
Halide free
Self-Protected MOSFET, 42 V clamp, Temp & Current Limit, ESD DPAK-3 369C 1 Tape and Reel 2500  
NID5001NT4 Last Shipments
Self-Protected MOSFET, 42 V clamp, Temp & Current Limit, ESD DPAK-3 369C 1 Tape and Reel 2500  
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) :
ON Semiconductor   (2015-03-04 00:00) : 25,000
PandS   (2015-03-05 00:00) : >1K
Market Leadtime (weeks) :
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