NID5001N: Self-Protected SmartDiscrete, 42 V clamp, Temp & Current Limit, ESD

Datasheet: Self-Protected FET with Temperature and Current Limit Rev. 8 (66.0kB)	»View Reliability Data »View Material Composition »Product Change Notification (5)
Product Overview

NID5001N is part of an advanced series of power MOSFETs which utilize ON Semiconductor's latest MSOFET technology process to achieve the lowest possible on-resistance per silicon are while incorporating smart features.

Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source clamp.

Features
Low RDSon
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb-Free Package is Available

Technical Documentation & Design Resources
Application Notes (1)	Package Drawings (1)
Data Sheets (1)