IGBT, Ultra Field Stop - 1200V 25A

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ulatra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited forUPS and solar applications. Incorporated into the device is a soft andfast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Industrial
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB25N120FL3WG

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Active

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

Y

-

1200

25

1.7

3

0.7

1

90

12

136

-

-

349

Yes

$2.5637

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