NGTB20N135IHR: IGBT 1350V 20A FS2-RC Induction Heating

Overview
Specifications
Datasheet: IGBT with Monolithic Free Wheeling Diode
Rev. 0 (172.0kB)
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Product Overview
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
Features   Benefits
     
  • Optimized fo Low Case Temperature in IH Cooker Applications
 
  • Low Switching Loss Reduces System Power Dissipation
  • Extremely Efficient Trench with Fieldstop Technology
   
  • 1350V Breakdown Voltage
   
  • Reliable and Cost Effective Single Die Solution
   
Applications
  • Inductive Heating
  • Consumer Appliances
  • Soft Switching
Technical Documentation & Design Resources
Tutorials (1) Data Sheets (1)
Application Notes (4) Package Drawings (1)
Reference Manuals (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
NGTB20N135IHRWG Active
Pb-free
Halide free
IGBT 1350V 20A FS2-RC Induction Heating TO-247 340AL NA Tube 30 $1.83
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) :
Avnet   (2014-07-25 00:00) : <100
Mouser   (2014-07-25 00:00) : <1K
Datasheet: IGBT with Monolithic Free Wheeling Diode
Rev. 0 (172.0kB)
»View Material Composition
»Product Change Notification (1)
Product Overview

Product Compliance Status Description V(BR)CES Typ (V) IC Max (A) VCE(sat) Typ (V) EAS Typ (mJ) PD Max (W) Co-Packaged Diode Package Type
 Pb-free 
 Halide free 
 Active     IGBT 1350V 20A FS2-RC Induction Heating   1350   20   2.2     394   Yes   TO-247 
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