Dual 60V P-Channel PowerTrench® MOSFET -2.3A, 250mΩ

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Overview

This P-Channel MOSFET is a rugged gate version of ON Semiconductor Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).

  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • -2.3A, -60V
  • RDS(ON) = 250 mΩ @ VGS = -10V
  • RDS(ON) = 500 mΩ @ VGS = -4.5V
  • Low gate charge (9nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDS9948

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-60

Q1=Q2=250

P-Channel

Dual

±20

-3

-2.3

60

-

Q1=Q2=500

-

9

394

$0.2417

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