Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NDDP010N25AZ: Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel

Product Description
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge. This devices is suitable for applications with low gate charge driving requirements.
Features   Benefits
     
  • High Speed Switching
 
  • Reduces dynamic power losses
  • ESD Diode-Protected Gate
 
  • ESD resistance
  • Low Gate Charge
 
  • Ease of drive, faster turn-on
  • 100% Avalanche Tested
 
  • Voltage overstress safeguard
  • Pb-Free, Halogen Free and RoHS Compliance
 
  • Environment friendliness
Applications   End Products
  • Battery Protection
  • Motor Drive
  • Primary Side Switch
  • Secondary Side Synchronous Rectification
 
  • Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
  • Other Motor
  • Power Supply
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel   N-Channel   Single   250   30   4.5   10   52       420     16     540   980   80   25   IPAK / TP 
 Pb-free 
 Halide free 
 Active     Power MOSFET, 250 V, 10 A, 420 mΩ, Single N-Channel   N-Channel   Single   250   30   4.5   10   52       420     16     540   980   80   25   DPAK / TP-FA 
Package Availability
Type
PB free
Standard
DPAK / TP-FA x  
IPAK / TP x