Energy Efficient Innovations
Product Overview
For complete documentation, see the data sheet.
Printed On: 7/11/2015
NDD03N80Z: Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Product Description
Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Features
Benefits
ESD diode-protected gate
ESD resistance
100% Avalanche Tested
This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant
100% Rg Tested
Applications
LED Lighting
Selected Electrical Specifications
Product
Compliance
Status
Description
Channel Polarity
Configuration
V
(BR)DSS
Min (V)
V
GS
Max (V)
V
GS(th)
Max (V)
I
D
Max (A)
P
D
Max (W)
r
DS(on)
Max @ V
GS
= 2.5 V (mΩ)
r
DS(on)
Max @ V
GS
= 4.5 V (mΩ)
r
DS(on)
Max @ V
GS
= 10 V (mΩ)
Q
g
Typ @ V
GS
= 4.5 V (nC)
Q
g
Typ @ V
GS
= 10 V (nC)
Q
gd
Typ @ V
GS
= 4.5 V (nC)
Q
rr
Typ (nC)
C
iss
Typ (pF)
C
oss
Typ (pF)
C
rss
Typ (pF)
Package Type
NDD03N80Z-1G
Pb-free
Halide free
Active
Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
N-Channel
Single
800
30
4.5
2.9
96
4500
17
9.1
1.3
440
52
9
IPAK-4
NDD03N80ZT4G
Pb-free
Halide free
Active
Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
N-Channel
Single
800
30
4.5
2.9
96
4500
17
9.1
1.3
440
52
9
DPAK-3
Package Availability
Type
PB free
Standard
DPAK-3
x
IPAK-4
x
For more information please contact your local sales support at www.onsemi.com