Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

NDD03N80Z: Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK

Product Description
Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK
Features   Benefits
     
  • ESD diode-protected gate
 
  • ESD resistance
  • 100% Avalanche Tested
   
  • This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant
   
  • 100% Rg Tested
   
Applications
  • LED Lighting
Selected Electrical Specifications

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK   N-Channel   Single   800   30   4.5   2.9   96       4500     17   9.1   1.3   440   52   9   IPAK-4 
 Pb-free 
 Halide free 
 Active     Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK   N-Channel   Single   800   30   4.5   2.9   96       4500     17   9.1   1.3   440   52   9   DPAK-3 
Package Availability
Type
PB free
Standard
DPAK-3 x  
IPAK-4 x