NDC7003P

Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω

Overview

These dual P-Channel Enhancement Mode Power Field Effect Transistors are produced using ON Semiconductor’s proprietary Trench Technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.

Applications

This product is general usage and suitable for many different applications.

Features

-0.34 A, -50 V.
R_DS(ON) = 5 Ω @ V_GS = -10 V
R_DS(ON) = 7 Ω @ V_GS = -4.7 V
Low gate charge
Fast switching speed
High performance trench technology for low R_DS(ON)
SuperSOT™ -6 package: small footprint (72%smaller than standard SO-8); low profile (1mm thick)

Material Composition

Product Change Notification

Product List

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

NDC7003P

Active

TSOT-23-6

419BL

260

REEL

3000

-60

Q1=Q2=5000

P-Channel

Dual

±20

-3.5

-0.34

0.96

Q1=Q2=7000

1.6

$0.1573

Product Number:

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MOSFETs | NDC7003P

Dual P-Channel Enhancement Mode Field Effect Transistor -60V, -0.34A, 5Ω

Overview

Product List

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