4 Mb, 3 V Parallel SRAM Memory

Favorite

Overview

The N04L63W2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using advanced CMOS technology from ON Semiconductor to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L63W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40°C to +85°C and is available in JEDEC standard packages compatible with other standard 256 kb x 16 SRAMs.

  • Single wide power supply range - 2.3 to 3.6 V
  • Very low standby current - 4.0 µA at 3.0 V (Typical)
  • Very low operating current - 2.0 mA at 3.0 V and 1 µs (Typical)
  • Very low page mode operating current - 0.8 mA at 3.0 V and 1 µs (Typical)
  • Simple memory control: Dual chip enable (CE1 and CE2), output enable (OE) for memory expansion
  • Low voltage data retention
  • 25 ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Compact space saving BGA package available

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

0

Share

Product Groups:

Orderable Parts:

0

Product

Status

CAD Models

Hmmm...
We're sorry, we couldn't find any matches for that search term.
Double check your search for any typos or spelling errors or try a different search term.

Show More

1-25 of 25

Products per page

Jump to :