MJL21194: Bipolar Transistor, NPN, 250 V, 16 A

Overview
Specifications
Datasheet: Silicon Power Transistors
Rev. 7 (116.0kB)
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»View Material Composition
»Product Change Notification (10)
Product Overview
Product Description
The MJL21193 and MJL21194 Bipolar Complementary Audio Power Transistors utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and other linear applications.
Features   Benefits
     
  • Excellent Gain Linearity
 
  • Accurate reproduction of input signal
  • High SOA: 2.25 A, 80 V, 1 Second
 
  • Reliable performance at higher powers
  • Total Harmonic Distortion Characterized
   
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
   
Applications   End Products
  • Professional audio amplifiers
 
  • High-fidelity consumer audio products
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
MJL21194G Active
Pb-free
Bipolar Transistor, NPN, 250 V, 16 A TO-3PBL/ TO-264-3 340G-02 NA Tube 25 $2.3999
MJL21194 Last Shipments
Bipolar Transistor, NPN, 250 V, 16 A TO-3PBL/ TO-264-3 340G-02 Tube 25  
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) :
Arrow   (2014-11-28 01:22) : 4327
Avnet   (2014-10-21 00:00) : >1K
Digi-Key   (2014-10-21 00:00) : <1K
Mouser   (2014-10-21 00:00) : >10K
P&S   (2014-10-21 00:00) : >1K
Market Leadtime (weeks) :
Datasheet: Silicon Power Transistors
Rev. 7 (116.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (10)
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) VCEO(sus) Min (V) hFE Min hFE Max PTM Max (W) fT Min (MHz) Package Type
 Pb-free   Active     Bipolar Transistor, NPN, 250 V, 16 A   NPN   16   250   25   75   200   4   TO-3PBL/ TO-264-3 
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