2.0 A, 100 V NPN Darlington Bipolar Junction Power Transistor

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Overview

This 2.0 A, 100 V NPN Darlington Bipolar Junction Power Transistor. The MJE270 (NPN) and MJE271 (PNP) are complementary devices.

  • NA
  • NA
  • High DC Current Gain
    hFE @ 120 mA, 10 V = 1,500 (Min)
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 100 Vdc (Min)
  • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A - TO-126
  • These Devices are Pb−Free and are RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

MJE270

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

NPN

2

100

2

1.5

-

6

Price N/A

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MJE270G

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Active

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

Y

NPN

2

100

2

1.5

-

6

$0.2899

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MJE270TG

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Active

CAD Model

Pb

A

H

P

TO-225-3

NA

0

TUBE

50

F

NPN

2

100

2

1.5

-

6

$0.3033

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