Product Description
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
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Features |
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Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
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High DC Current Gain
hFE = 40 (Min) @ IC= 200 mAdc hFE= 15 (Min) @ IC = 1.0 Adc
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Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
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Straight Lead Version in Plastic Sleeves ("-1" Suffix)
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Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
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Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
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High Current-Gain-Bandwith Product -
fT = 40MHz (Min) @ IC = 100 mAdc
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Annular Construction for Low Leakage -
ICBO = 100 nAdc @ Rated VCB
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NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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These are PbFree Packages
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