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MJ21193: Bipolar Transistor, PNP, 250 V, 16 A

Overview
Specifications
Datasheet: Silicon Power Transistors
Rev. 6 (122.0kB)
Product Overview
»View Reliability Data
»View Material Composition
»Product Change Notification (3)
The MJ21193 and MJ21194 utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.
Features
 
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 2.5 A, 80 V, 1 Second
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
MJ21193G Active
Pb-free
Bipolar Transistor, PNP, 250 V, 16 A TO-204-2 1-07 NA Tray Foam 100 $2.7999
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 8 to 12
Arrow   (Sat Dec 03 05:12:43 MST 2016) : 1547
Avnet   (2016-12-01) : <1K
Digikey   (2016-12-01) : <1K
Mouser   (2016-12-01) : <1K
PandS   (2016-12-01) : <100
Datasheet: Silicon Power Transistors
Rev. 6 (122.0kB)
Product Overview
»View Reliability Data
»View Material Composition
»Product Change Notification (3)

Product Compliance Status Description Polarity IC Continuous (A) VCEO(sus) Min (V) hFE Min hFE Max PTM Max (W) fT Min (MHz) Package Type
Pb-free
 Active     Bipolar Transistor, PNP, 250 V, 16 A 
PNP
16
250
25
75
250
5
TO-204-2
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