feedback
Rate this webpage

Need
Support?


MJ11032: 50 A, 120 V NPN Darlington Bipolar Power Transistor

Overview
Specifications
Datasheet: High-Current Complementary Silicon Transistors
Rev. 6 (116.0kB)
Product Overview
»View Reliability Data
»View Material Composition
»Product Change Notification (3)
These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
Features
 
  • High DC Current Gain -
    hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
MJ11032G Active
Pb-free
50 A, 120 V NPN Darlington Bipolar Power Transistor TO-204-2 / TO-3-2 197A-05 NA Tray Foam 100 $5.1479
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 13 to 16
Arrow   (Mon Dec 05 09:35:46 MST 2016) : 433
Avnet   (2016-12-04) : >1K
Digikey   (2016-12-04) : >1K
Mouser   (2016-12-04) : >1K
PandS   (2016-12-04) : >1K
Datasheet: High-Current Complementary Silicon Transistors
Rev. 6 (116.0kB)
Product Overview
»View Reliability Data
»View Material Composition
»Product Change Notification (3)

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type
Pb-free
 Active     50 A, 120 V NPN Darlington Bipolar Power Transistor 
NPN
50
120
2.5
1
18
-
TO-204-2 / TO-3-2
Previously Viewed Products
Clear List