MJ11032: 50 A, 120 V NPN Darlington Bipolar Power Transistor

Overview
Specifications
Datasheet: High-Current Complementary Silicon Transistors
Rev. 6 (116.0kB)
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Product Overview
Product Description
These Bipolar Power Darlington Transistors are for use as output devices in complementary general purpose amplifier applications.
Features
 
  • High DC Current Gain -
    hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
MJ11032G Active
Pb-free
50 A, 120 V NPN Darlington Bipolar Power Transistor TO-204-2 / TO-3-2 197A-05 Tray Foam 100 $5.1479
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) :
Arrow   (2014-10-21 00:03) : 1391
Avnet   (2014-10-03 00:00) : <100
Chip1Stop   (2014-10-03 00:00) : <100
Digi-Key   (2014-10-03 00:00) : >1K
Mouser   (2014-10-03 00:00) : <1K
Newark   (2014-10-03 00:00) : >1K
P&S   (2014-10-03 00:00) : >1K
Datasheet: High-Current Complementary Silicon Transistors
Rev. 6 (116.0kB)
»View Reliability Data
»View Material Composition
»Product Change Notification (3)
Product Overview

Product Compliance Status Description Polarity IC Continuous (A) V(BR)CEO Min (V) VCE(sat) Max (V) hFE Min (k) hFE Max (k) fT Min (MHz) Package Type
 Pb-free   Active     50 A, 120 V NPN Darlington Bipolar Power Transistor   NPN   50   120   2.5   1   18   -   TO-204-2 / TO-3-2 
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