feedback
Rate this webpage

Need
Support?


MCH6660: Power MOSFET, 20V, 136mΩ, 2A, -20V, 266mΩ, -1.5A, Complementary Dual

Overview
Specifications
Datasheet: Power MOSFET, 20V, 136mOhm, 2A, -20V, 266mOhm, -1.5A, Complementary Dual
Rev. 2 (1218kB)
»View Material Composition
»Product Change Notification (2)
Product Overview
Product Description
MCH6660 is a Power MOSFET, 20V, 136mΩ, 2A, -20V, 266mΩ, -1.5A, Complementary Dual for General-Purpose Switching Device Applications.
Features   Benefits
     
  • Low RDS(on)
 
  • Minimize Conduction Losses
  • Pb-Free, Halogen Free and RoHS Compliance
 
  • Environmental Consideration
  • ESD Diode - Protected Gate
 
  • ESD Resistance
  • 1.8V drive
   
  • Nch MOSFET and Pch MOSFET are put in MCPH6 Package
   
  • Ultrasmall Package MCPH6 (2.0mm×2.1mm×0.85mmt)
   
Applications   End Products
  • General-Purpose Switching Device
  • Motor Drive
 
  • Water Meters
Technical Documentation & Design Resources
Data Sheets (1) Package Drawings (1)
Availability and Samples
Product
Status
Compliance
Description
Package
MSL*
Container
Budgetary Price/Unit
Type
Case Outline
Type
Qty.
MCH6660-TL-H Active, Not Rec
Pb-free
Halide free
Power MOSFET, 20V, 136mΩ, 2A, -20V, 266mΩ, -1.5A, Complementary Dual SC-88FL / MCPH-6 419AS 1 Tape and Reel 3000  
MCH6660-TL-W Active 
Pb-free
Halide free
Power MOSFET, 20V, 136mΩ, 2A, -20V, 266mΩ, -1.5A, Complementary Dual SC-88FL / MCPH-6 419AS 1 Tape and Reel 3000 $0.1533
Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)
Market Leadtime (weeks) : 2 to 4
Mouser   (2015-07-09) : <1K
Market Leadtime (weeks) : 4 to 8
Datasheet: Power MOSFET, 20V, 136mOhm, 2A, -20V, 266mOhm, -1.5A, Complementary Dual
Rev. 2 (1218kB)
»View Material Composition
»Product Change Notification (2)
Product Overview

Product Compliance Status Description Channel Polarity Configuration V(BR)DSS Min (V) VGS Max (V) VGS(th) Max (V) ID Max (A) PD Max (W) rDS(on) Max @ VGS = 2.5 V (mΩ) rDS(on) Max @ VGS = 4.5 V (mΩ) rDS(on) Max @ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC) Qg Typ @ VGS = 10 V (nC) Qgd Typ @ VGS = 4.5 V (nC) Qrr Typ (nC) Ciss Typ (pF) Coss Typ (pF) Crss Typ (pF) Package Type
 Pb-free 
 Halide free 
 Active     Power MOSFET, 20V, 136mΩ, 2A, -20V, 266mΩ, -1.5A, Complementary Dual   Complementary   Dual   20   10   1.3   2   0.8   205   136     1.8     0.55     128   28   21   SC-88FL / MCPH-6 
Previously Viewed Products
Clear List

New Products
 

NDBA100N10B  NDPL100N10B  Power N-Channel MOSFETs, 100 V, 100 A

  • Low on-resistance as low as 6.9 mΩ
  • Low gate charge of 35 nC, and high speed switching
  • D2PAK and TO-220 available

NTP8G206N  Power GaN Cascode Transistor, 600 V, 150 mΩ Single N-Channel

  • Fast switching
  • Extremely low Qrr
  • High efficiencies