Energy Efficient Innovations

Product Overview  


For complete documentation, see the data sheet.

Printed On: 7/11/2015

MBRAF2H100: 2.0 A, 100 V Schottky Rectifier

Product Description
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features
 
  • Low Profile Package for Space Constrained Applications
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • 150°C Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • These are Pb-Free and Halide-Free Devices

    Mechanical Characteristics:
  • Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
  • Weight: 95 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
Selected Electrical Specifications

Product Compliance Status Description Configuration VRRM Min (V) VF Max (V) IRM Max (uA) IO(rec) Max (A) IFSM Max (A) trr Max (ns) Cj Max (pF) Package Type
 AEC Qualified 
 Pb-free 
 Halide free 
 Active     2.0 A, 100 V Schottky Rectifier   Single   100   0.79   8   2   130   -   -   SMA-FL 
Package Availability
Type
PB free
Standard
SMA-FL x