IRLM120A

N-Channel A-FET 200V, 1.13A, 800mΩ

Overview

Features

Avalanche Rugged Technology
Rugged Gate Oxide Technology ν Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 μA (Max.) @ V_DS = 200V
Lower R_DS(ON): 0.609 Ω (Typ.)

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

IRLM120ATF

Obsolete

SOT-223-4 / TO-261-4

318H-01

250

REEL

4000

200

N-Channel

Single

±20

1.13

2.7

220

10.2

340

Price N/A

Product Number:

Distributor		Stock	BUY

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MOSFETs | IRLM120A

N-Channel A-FET 200V, 1.13A, 800mΩ

Overview

Product List

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