Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

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Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

  • LED TV
  • 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A
  • Low Gate Charge ( Typ. 9.5nC)
  • Low Crss ( Typ. 35pF)
  • 100% Avalanche Tested
  • Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQU13N10LTU

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Last Shipments

CAD Model

Pb

A

H

P

IPAK-3 / DPAK-3 STRAIGHT LEAD

NA

0

TUBE

5040

N

100

180

N-Channel

Single

±20

2

10

40

-

200

-

8.7

400

Price N/A

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