FQP8N60C

Power MOSFET, N-Channel, QFET^®, 600 V, 7.5 A, 1.2 Ω, TO-220

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested

Material Composition

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP8N60C

Last Shipments

TO-220-3

340AT

TUBE

1000

600

1200

N-Channel

Single

7.5

147

965

Price N/A

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MOSFETs | FQP8N60C

Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220

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Power MOSFET, N-Channel, QFET^®, 600 V, 7.5 A, 1.2 Ω, TO-220