Power MOSFET, N-Channel, QFET®, 500 V, 4.5 A, 1.2 Ω, DPAK

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Overview

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..

  • Lighting
  • 4.5A, 500V, RDS(on) = 1.2Ω(Max.) @VGS = 10 V, ID = 2.25A
  • Low gate charge ( Typ. 19nC)
  • Low Crss ( Typ. 15pF)
  • 100% avalanche tested

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQD6N50CTM

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

500

1200

N-Channel

Single

±30

4

4.5

61

-

-

-

19

540

Price N/A

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