100V P-Channel QFET® -22A, 125mΩ

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Overview

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

  • Power Train
  • -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
  • Low gate charge ( typical 40 nC)
  • Low Crss ( typical 160 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
  • Qualified to AEC Q101
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FQB22P10TM-F085

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

1

245

REEL

800

N

-100

125

P-Channel

Single

±30

-4

-22

125

-

-

-

40

1170

Price N/A

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