Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 1200V, D1, TO-247-2L

Favorite

Overview

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
  • Automotive HEV-EV Onboard Chargers
  • Max Junction Temperature 175 °C
  • Avalanche Rated 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 qualified and PPAP Capable

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Reference Price

FFSH20120A-F085

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-2

NA

0

TUBE

450

Y

D1

Single

1200

20

1.75

135

200

$6.6981

More Details

Show More

1-25 of 25

Products per page

Jump to :