Rectifiers | FFP30S60S

30A, 600V, STEALTH™ II Diode

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Overview

The FFP30S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

  • Uninterruptible Power Supply

  • Stealth recovery Trr = 40ns (@IF= 30A)
  • Max Forward Voltage, VF = 2.6V (@ TC = 25°C)
  • 600V Reverse Voltage and High Reliability
  • Avalanche Energy Rated
  • RoHS compliant

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FFP30S60STU

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CAD Model

Pb

A

H

P

TO-220-2

340BA

NA

0

TUBE

1000

N

Single

30

40

600

2.6

300

0.1

Price N/A

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Reliability Data

Die Related Summary Data

Device: FFP30S60STU

Equivalent to wafer fab process: 3B

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B

20

5701956337

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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