N-Channel PowerTrench® MOSFET 150V, 1.2A, 845mΩ

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Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

  • Consumer Appliances
  • DC-DC Conversion
  • Inverter
  • Synchronous Rectifier
  • Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A
  • Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A
  • Very low Qg and Qgd compared to competing trench technologies
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDT86256

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Last Shipments

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

N

100

845

N-Channel

Single

±20

4

1.2

10

-

-

-

0.8

55

Price N/A

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