N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor 30V, 6.3A, 45mΩ

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Overview

This N-Channel Enhancement mode field effect transistor is produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Load Switch
  • Motor Drives
  • 6.3 A, 30 V
    RDS(on) = 0.045 Ω @ VGS = 4.5 V
    RDS(on) = 0.058 Ω @ VGS = 2.5 V
  • Fast switching speed
  • High power and current handling capabitlity in a widely used surface mount package

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDT439N

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

Y

30

-

N-Channel

Single

8

1

6.3

3

58

45

-

10.7

500

$0.3483

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