N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ

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Overview

This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are:
1. A drain to source voltage feedback signal and
2. A gate drive disable control function that previously required external discrete circuitry.
Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired “OR’d” together to a single input of the monitoring circuit.
The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired “OR’d” allowing multiple devices to be controlled by a single open collector / drain control transistor.

  • Power Train
  • Automotive Injector Driver
  • Solenoid Driver
  • 62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8
  • 5V Logic Level feedback signal of the drain to sourcevoltage
    Multiple devices can be wired "OR'd" to a single monitoring circuit input
  • Gate Drive Disable Input
    Multiple devices controllable bya single disable transistor
  • Qualified to AEC Q101

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDSS2407

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

62

Q1: 110.0, Q2: 110.0

N-Channel

Dual

±20

3

3.3

2.27

-

Q1: 132.0. Q2: 132.0

13

3.3

300

Price N/A

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