MOSFETs | FDS8958A_F085

Dual N & P-Channel PowerTrench® MOSFET 30V

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CAD Model

Overview

These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • Infotainment
  • Portable Navigation
  • Infotainment
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Q1: N-Channel
    7.0 A, 30 V
    RDS(ON) = 28 mΩ @ VGS = 10 V
    RDS(ON) = 40 mΩ @ VGS = 4.5 V
  • Q2: P-Channel
    5 A, -30 V
    RDS(ON) = 52 mΩ @ VGS = -10 V
    RDS(ON) = 80 mΩ @ VGS = -4.5 V
  • Fast switching speed
  • High power and handling capability in a widelyused surface mount package
  • Qualified to AEC Q101
  • RoHS compliant

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8958A-F085

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±30

N: 28, P: 52

Complementary

Dual

20

±3

N: 7.0, P: 5.0

2

-

N: 40, P: 80

-

9.6

N: 575, Q2:528

Price N/A

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