FDS8949

Dual N-Channel PowerTrench^® MOSFET, Logic Level, 40V, 6A, 29mΩ

Overview

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench^® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

This product is general usage and suitable for many different applications.
Inverter
Power Supplies

Features

Max r_DS(on) = 29mΩ at V_GS = 10V
Max r_DS(on) = 36mΩ at V_GS = 4.5V
Low gate charge
High performance trench technology for extremely low r_DS(on)
High power and current handling capability
RoHS compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8949

Active

SOIC-8

751EB

260

REEL

2500

Q1=Q2=29

N-Channel

Dual

±20

Q1=Q2=36

7.7

715

$0.44

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS8949

Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6A, 29mΩ

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Dual N-Channel PowerTrench^® MOSFET, Logic Level, 40V, 6A, 29mΩ