FDS8858CZ

Dual N & P-Channel PowerTrench^® MOSFET 30V

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Overview

These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

This product is general usage and suitable for many different applications.
Inverter
Synchronous Buck

Features

Q1 N-Channel
Max. R_DS(on) = 17 mΩ at V_GS = 10 V, I_D = 8.6 A
Max. R_DS(on) = 20 mΩ at V_GS = 4.5 V, I_D = 7.3 A
Q2 P-Channel
Max. R_DS(on) = 20.5 mΩ at V_GS = -10 V, I_D = -7.3 A
Max. R_DS(on) = 34.5 mΩ at V_GS = -4.5 V, I_D = -5.6 A
High Power and Current Handling Capability in a Widely Used Surface Mount Package
Fast Switching Speed

Material Composition

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS8858CZ

Active

SOIC-8

751EB

260

REEL

2500

±30

N: 1.0, P:20.5

Complementary

Dual

±3

N: 8.6, P: -7.3

N: 20.0, P:34.5

1675

$0.3709

Product Number:

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MOSFETs | FDS8858CZ

Dual N & P-Channel PowerTrench® MOSFET 30V

Overview

Product List

Email Sales

Dual N & P-Channel PowerTrench^® MOSFET 30V