FDS86140

N-Channel PowerTrench^® MOSFET 100V, 11.2A, 9.8mΩ

Overview

This N-Channel MOSFET is produced using an advanced Power Trench^® process that has been optimized for r_DS(on), switching performance and ruggedness.

Applications

Distribution
DC/DC Converters
Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier

Features

Max r_DS(on) = 9.8 mΩ at V_GS = 10 V, I_D = 11.2 A
Max r_DS(on) = 16 mΩ at V_GS = 6 V, I_D = 9 A
High performance trench technologh for extremely low r_DS(on)
High power and current handing capability in a widely used surface mount package
100% UIL Tested
RoHS Compliant

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS86140

Active

SOIC-8

751EB

260

REEL

2500

100

9.8

N-Channel

Single

±20

11.2

16.5

1940

$1.2073

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS86140

N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ

Overview

Product List

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N-Channel PowerTrench^® MOSFET 100V, 11.2A, 9.8mΩ