30V P-Channel PowerTrench® MOSFET -20A, 4.6mΩ

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Overview

This P-channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

  • This product is general usage and suitable for many different applications.
  • -20 A, -30V
  • RDS(ON) = 4.6 mΩ @ VGS = -10V
  • RDS(ON) = 6.5 mΩ @ VGS = -4.5V
  • Extended VGSS range (–25V) for battery applications
  • HBM ESD protection level of 8kV typical (note 3)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6681Z

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-30

4.6

P-Channel

Single

25

-3

-20

2.5

-

6.5

12

105

7540

$0.9418

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