P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -11A, 14mΩ

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Overview

This P-Channel 2.5V specified MOSFET is in a rugged gate version of an advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).

  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Management
  • -11 A, -20 V.
  • RDS(ON) = 0.014 Ω @ VGS = -4.5 V
  • RDS(ON) = 0.020 Ω @ VGS = -2.5 V
  • Extended VGSS range (+-12V) for battery applications
  • Low gate charge (44nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • RoHS Compliant.

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6576

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

-20

-

P-Channel

Single

12

-1.5

-11

2.5

20

14

5

43

4044

$0.4605

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