FDS4559

60V Complementary PowerTrench^® MOSFET

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Overview

This complementary MOSFET device is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Applications

This product is general usage and suitable for many different applications.
DC/DC Converters
Power Management
LCD Backlight Inverter

Features

Q1 N-Channel
4.5A, 60V
Max. R_DS(on) = 55 mΩ at V_GS = 10 V,
Max. R_DS(on) = 75 mΩ at V_GS = 4.5 V
Q2 P-Channel
-3.5A, -60V
Max. R_DS(on) = 105 mΩ at V_GS = -10 V,
Max. R_DS(on) = 135 mΩ at V_GS = -4.5 V

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS4559

Active

SOIC-8

751EB

260

REEL

2500

±60

N:55.0,P:105.0

Complementary

Dual

±20

±3

N: 4.5, P: -3.5

N:75.0,P:135.0

N: 650, P: 759

$0.312

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDS4559

60V Complementary PowerTrench® MOSFET

Overview

Product List

Email Sales

60V Complementary PowerTrench^® MOSFET