FDS4465

P-Channel 1.8V Specified PowerTrench^® MOSFET -20V, -13.5A, 8.5mΩ

Overview

This P-Channel 1.8V specified MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

Applications

This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection

Features

-13.5 A, -20 V.
R_DS(on) = 8.5mΩ @ V_GS = - 4.5V
R_DS(on) = 10.5mΩ @ V_GS = - 2.5V
R_DS(on) = 14mΩ @ V_GS = - 1.8V
Fast switching speed
High performance trench technology for extremelylow R_DS(ON)
High current and power handling capability

Material Composition

Product Change Notification

Product List

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDS4465

Active

SOIC-8

751EB

260

REEL

2500

-20

P-Channel

Single

-1.5

-13.5

2.5

10.5

8.5

8237

$0.6585

Product Number:

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MOSFETs | FDS4465

P-Channel 1.8V Specified PowerTrench® MOSFET -20V, -13.5A, 8.5mΩ

Overview

Product List

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P-Channel 1.8V Specified PowerTrench^® MOSFET -20V, -13.5A, 8.5mΩ