N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

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Overview

This single N-Channel MOSFET is produced using an advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
  • Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
  • Fast switching speed
  • High performance trench technology for extremely low rDS(on)
  • RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS2672

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

200

70

N-Channel

Single

±20

4

3.9

2.5

-

-

-

33

1905

$0.8382

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