N-Channel Dual CoolTM 56 Power Trench® MOSFET 40V, 192A, 1.1mΩ

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Overview

This N-Channel MOSFET is produced using an advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

  • Energy Generation & Distribution
  • Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
  • Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS8320LDC

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Active

CAD Model

Pb

A

H

P

DFN-8

1

260

REEL

3000

Y

40

1.1

N-Channel

Single

±20

3

192

125

-

1.5

-

57

8310

$1.2561

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