FDMS6673BZ

P-Channel PowerTrench^® MOSFET -30V, -82A, 6.8mΩ

Overview

The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest R_DS(on) and ESD protection.

Applications

This product is general usage and suitable for many different applications.

Features

Max r_DS(on) = 6.8 mΩ at V_GS = -10 V, I_D = -15.2 A
Max r_DS(on) = 12.5 mΩ at V_GS = -4.5 V, I_D = -11.2 A
Advanced Package and Silicon combination for low r_DS(on)
HBM ESD protection level of 8 kV typical (Note 3)
MSL1 robust package design
RoHS Compliant

Material Composition

Product Change Notification

Product List

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMS6673BZ

Active

PQFN-8

483AE

260

REEL

3000

-30

6.8

P-Channel

Single

-3

-82

12.5

4444

$0.7705

Product Number:

Distributor		Stock	BUY

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MOSFETs | FDMS6673BZ

P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ

Overview

Product List

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P-Channel PowerTrench^® MOSFET -30V, -82A, 6.8mΩ